Transconductance in nitride-gate or oxynitride-gate transistors

Experimental evidence is presented to support the argument that border traps are responsible for the anomalous shape of the transconductance-gate voltage curve in MOS transistors with nitride of oxynitride gate dielectric when compared with their oxide counterpart. Our measurements have revealed a h...

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Bibliographic Details
Published in:IEEE electron device letters 1999-01, Vol.20 (1), p.57-59
Main Authors: Khare, M., Wang, X.W., Ma, T.P.
Format: Article
Language:English
Subjects:
Aluminum
Annealing
Borders
Carriers
Dielectric devices
Dielectric substrates
Dielectrics
Electron traps
Electronics
Gates
MOSFET circuits
Nitrogen
Semiconductor devices
Silicon
Transconductance
Transistors
Voltage
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Summary:Experimental evidence is presented to support the argument that border traps are responsible for the anomalous shape of the transconductance-gate voltage curve in MOS transistors with nitride of oxynitride gate dielectric when compared with their oxide counterpart. Our measurements have revealed a high density of border traps in the gate dielectric containing a high concentration of nitrogen. These border traps appear to affect the transconductance in two ways: in the low gate field region, the trapping of carriers causes a significant reduction of the carrier density and thus a reduced transconductance, while in the high gate field region the "screening" effect of trapped carriers causes a smoothening of the electronic interface, and thus an increased transconductance.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.737573