Tuning the electronic properties of graphene by hydrogenation in a plasma enhanced chemical vapor deposition reactor

Graphene films grown by chemical vapor deposition on copper foils were hydrogenated using commercially viable methods. Parameters such as plasma power, plasma frequency, and sample temperature were varied to determine the maximum possible hydrogenation without etching the film. The kinetic energy of...

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Bibliographic Details
Published in:Carbon (New York) 2011-11, Vol.49 (13), p.4420-4426
Main Authors: Burgess, James S., Matis, Bernard R., Robinson, Jeremy T., Bulat, Felipe A., Keith Perkins, F., Houston, Brian H., Baldwin, Jeffrey W.
Format: Article
Language:English
Subjects:
Carbon
Cross-disciplinary physics: materials science
rheology
Electrical resistivity
Etching
Exact sciences and technology
Fullerenes and related materials
diamonds, graphite
Graphene
Hydrogenation
Kinetic energy
Materials science
Physics
Plasma enhanced chemical vapor deposition
Specific materials
Tuning
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Summary:Graphene films grown by chemical vapor deposition on copper foils were hydrogenated using commercially viable methods. Parameters such as plasma power, plasma frequency, and sample temperature were varied to determine the maximum possible hydrogenation without etching the film. The kinetic energy of the ions inside the plasma is critical, in that higher kinetic energy ions tend to etch the film while lower kinetic energy ions participate in the hydrogenation process. The film sheet resistance was shown to increase, while the hole mobility was shown to decrease with increasing hydrogenation. Variable temperature measurements demonstrate a transition from semi-metallic behavior for graphene to semiconducting behavior for hydrogenated graphene. Sheet resistance measurements as a function of temperature also suggest the emergence of a bandgap in the hydrogenated graphene films.
ISSN:0008-6223
1873-3891
DOI:10.1016/j.carbon.2011.06.034