Amorphous silicon-based unipolar detector for color recognition

The device performance of a novel color sensitive diode (p-i-i-i-n-diode)-based on amorphous silicon is discussed. The detectors are developed with regard to the /spl mu//spl tau/-(carrier mobility/spl times/lifetime)-product and the bandgap of the different i-layers resulting in a voltage controlle...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 1999-05, Vol.46 (5), p.884-891
Main Authors: Zimmer, J., Knipp, D., Stiebig, H., Wagner, H.
Format: Article
Language:English
Subjects:
Amorphous materials
Amorphous silicon
Color
Detectors
Devices
Diodes
Electric potential
Illumination
Lighting
Mathematical models
Numerical simulation
Photoconductivity
Photoelectric effect
Photonic band gap
Signal generators
Spectral response
Voltage control
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The device performance of a novel color sensitive diode (p-i-i-i-n-diode)-based on amorphous silicon is discussed. The detectors are developed with regard to the /spl mu//spl tau/-(carrier mobility/spl times/lifetime)-product and the bandgap of the different i-layers resulting in a voltage controlled spectral response. Since the linear independence of the spectral response curves and a linear response of the photocurrent on the incident light intensity is a prerequisite for the generation of a red-green-blue signal, the influence of light intensity on the color separation is examined by spectral response measurements under different monochromatic bias illumination. Additionally, numerical simulations are carried out to study the optoelectronic properties of these devices. Finally, a deconvolution method is presented which allows the transformation of the measured spectral response curves into a red-green-blue signal.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.760393