Fermi surface topology of deuterium-doped vanadium: Compton scattering study

The deuteration-induced effect on the Fermi surface (FS) topology of V was investigated by the synchrotron-based Compton scattering technique with 115 keV X-rays. The three-dimensional occupation number density (OND) of alpha -VD sub(0.64 single crystal and V single crystal was reconstructed by the...

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Bibliographic Details
Published in:Journal of alloys and compounds 2011-09, Vol.509 (37), p.8983-8986
Main Authors: MIZUSAKI, S, SATO, N, ITO, Y, ITOU, M, YAMAMOTO, I, NAGATA, Y, SAKURAI, Y, YAMAGUCHI, M
Format: Article
Language:English
Subjects:
Bands
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Density
Deuterium
Elastic scattering
Electron states
Exact sciences and technology
Fermi surface: calculations and measurements
effective mass, g factor
Fermi surfaces
Occupation
Physics
Single crystals
Topology
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Summary:The deuteration-induced effect on the Fermi surface (FS) topology of V was investigated by the synchrotron-based Compton scattering technique with 115 keV X-rays. The three-dimensional occupation number density (OND) of alpha -VD sub(0.64 single crystal and V single crystal was reconstructed by the directional Compton profiles along 13-18 directions. The observed OND shows that the FS topology of alpha -VD) sub(0).64.differs from that of V at Gamma , N, and H points in the crystal momentum space, which are hole position for V. This indicates that electrons that originate from deuterium modify the upper part of the host metal d bands (3rd and 4th bands) at the Fermi level E sub(F, and forms the metal-hydrogen bonding states with the lower part of the host metal d band (1st band).)
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2011.06.082