Effect of tantalum nitride supporting layer on growth and morphology of carbon nanotubes by thermal chemical vapor deposition

• Published in: Diamond and related materials 2011-07, Vol.20 (7), p.999-1004
• Main Authors: Bouchet-Fabre, B., Fadjié-Djomkam, A., Fernandez-Pacheco, R., Delmas, M., Pinault, M., Jegou, P., Reynaud, C., Mayne-L'Hermite, M., Stephan, O., Minéa, T.
• Format: Article
• Language: English
• Subjects: Atomic beam spectroscopy; Barrier layer; Carbon nanotubes; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Chemical vapour deposition; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; High resolution transmission electron microscopy; Magnetron sputtering; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Morphology; Nanoscale materials and structures: fabrication and characterization; Nanotubes; Nucleation; Other topics in nanoscale materials and structures; Physics; Raman; Tantalum nitride; Tantalum nitrides; Theory and models of film growth; Thin films
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/j.diamond.2011.05.006

The role of tantalum nitride (TaNx) thin films as buffer layers on the control of nucleation and growth of aligned carpet-like carbon nanotubes (CNTs) has been proved. TaNx thin films have been deposited on Si by controlled magnetron sputtering process. Multiwall CNTs have been synthesized at 850 °C using an aerosol of ferrocene diluted in toluene. Electron microscopy images show a strong correlation between the growth rate and morphology of the CNTs and the initial composition of the TaNx thin films. Multi-scale investigations reveal that both morphology and structure of the CNTs are determined by the properties of the TaNx films. Raman and X-ray photoelectron spectroscopy, high resolution TEM imaging at the submicrometric and atomic scales have been used to confirm these hypotheses. ► Mastering the CNT growth via the use of selected buffers, here TaN. ► Studying the influence of TaN on the CNT morphology. ► Investigating the interfaces by ultra HRTEM.