Low Dark-Current Lateral Amorphous-Selenium Metal-Semiconductor-Metal Photodetector

We report a lateral amorphous-selenium (a-Se) metal-semiconductor-metal detector with a blocking contact. The blocking contact, a polyimide layer, is shown to significantly reduce the dark current even at high applied biases that result in high photo-current-to-dark-current ratios, thus leading to w...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2011-09, Vol.32 (9), p.1263-1265
Main Authors: Abbaszadeh, S., Allec, N., Kai Wang, Karim, K. S.
Format: Article
Language:English
Subjects:
Amorphous selenium (a-Se)
Applied sciences
Chest
Compound structure devices
Contact
Current measurement
Dark current
Detectors
Devices
Electrodes
Electronics
Exact sciences and technology
General equipment and techniques
Imaging
Imaging devices
indirect conversion X-ray imaging
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
metal-semiconductor-metal (MSM) photodetector
Optoelectronic devices
Photodetectors
Physics
Polyimide resins
Polyimides
Radiography
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Sensors (chemical, optical, electrical, movement, gas, etc.)
remote sensing
X-ray imaging
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report a lateral amorphous-selenium (a-Se) metal-semiconductor-metal detector with a blocking contact. The blocking contact, a polyimide layer, is shown to significantly reduce the dark current even at high applied biases that result in high photo-current-to-dark-current ratios, thus leading to wide dynamic range and high signal-to-noise ratio. The use of the polyimide blocking contact prevents the injection of both holes and electrons and improves considerably upon the high dark current of previously reported lateral a-Se detectors. The proposed detector demonstrates the feasibility of low-cost lateral a-Se devices for indirect conversion digital X-ray imaging applications such as chest radiography, fluoroscopy, and computed tomography.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2160327