Influence of temperature and drain current on source and drain resistances in AlGaN/GaN HEMTs

► We study the behavior of source and drain resistances in AlGaN/GaN HEMTs. ► Both resistances increase with temperature and drain current in a non-linear way. ► Non-linear resistances allow a more accurate extraction of intrinsic parameters. ► Higher intrinsic g m and C gs are found using variable...

Full description

Saved in:
Bibliographic Details
Published in:Solid-state electronics 2011-09, Vol.63 (1), p.184-188
Main Authors: Cuerdo, R., Calle, F.
Format: Article
Language:English
Subjects:
AlGaN/GaN HEMT
Applied sciences
Drain resistance
Drains
Electrical engineering. Electrical power engineering
Electron mobility
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Gallium nitride
Gallium nitrides
High electron mobility transistors
Mathematical analysis
Mathematical models
Nonlinearity
Power electronics, power supplies
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Source resistance
Temperature dependence
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:► We study the behavior of source and drain resistances in AlGaN/GaN HEMTs. ► Both resistances increase with temperature and drain current in a non-linear way. ► Non-linear resistances allow a more accurate extraction of intrinsic parameters. ► Higher intrinsic g m and C gs are found using variable source and drain resistances. The behavior of source and drain resistances ( R S and R D) has been studied for a wide range of drain currents at ambient temperatures from 150 to 500 K. Both parasitic resistances show an important increase as temperature rises, directly related to the reduction in the electron mobility. High drain currents also produce a non-linear increment of R S and R D, once the space-charge limited current is exceeded. Both temperature and drain current mechanisms have been modeled together by means of a simple equation, and a good agreement between simulations and measurements is found. Non-linear R S and R D allow a more accurate extraction of the intrinsic parameters, especially in the high drain current range. The use of variable parasitic resistances instead of their usually assumed constant values reveals higher intrinsic transconductance ( g m,int) and C gs.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2011.05.021