Synthesis of Cu(In,Ga)Se2 absorber using one-step electrodeposition of Cu-In-Ga precursor

• Published in: Thin solid films 2011-08, Vol.519 (21), p.7241-7244
• Main Authors: RIBEAUCOURT, L, CHASSAING, E, SAVIDAND, G, LINCOT, D
• Format: Article
• Language: English
• Subjects: Applied sciences; CIGS; Condensed matter: structure, mechanical and thermal properties; Copper; COPPER INDIUM SELENIDE; COPPER SELENIDE; Cross-disciplinary physics: materials science; rheology; Crystallinity; DEPOSITION; Diffusion; interface formation; ELECTRODEPOSITION; Electrodeposition, electroplating; ELECTRODES; ELECTROLYTES; Energy; Exact sciences and technology; Gallium; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Natural energy; Photovoltaic conversion; Physics; Precursors; SOLAR CELLS; Solar cells. Photoelectrochemical cells; Solar energy; Solid surfaces and solid-solid interfaces; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; THIN FILMS
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2010.12.104

One-step Cu-In-Ga electrodeposition on Mo substrate is carried out by potentiostatic method in acidic aqueous media. The applied potential, the pH and the nature of the electrolyte are determined to obtain adequate precursor composition. The electrodeposit is found highly dendritic, due to Cu diffusion-controlled deposition. Selenization at temperatures ranging from 450 to 600 degree C leads to Cu(In,Ga)Se2 (CIGS) absorber. The influence of selenization temperature and duration on Ga distribution as well as on CIGS crystallinity is discussed. Although the precursor is dendritic, relatively compact absorbers can be obtained. The best solar cell, achieved on 0.1cm2, shows 9.3% efficiency (Voc 456mV; jsc 33mAcm-2; FF 62%).