Structural and magnetic properties of Mn-doped anatase TiO2 films synthesized by atomic layer deposition

Mn-doped anatase TiO 2 (Mn: 1.2, 2.4 at%) thin films were grown on Si(100) via atomic layer deposition (ALD). The synthesis utilized Ti(OCH(CH 3 ) 2 ) 4 and H 2 O as ALD precursors and Mn(DPM) 3 as a dopant source. X-ray photoelectron spectroscopy measurements indicate that Mn is successfully doped...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2011-08, Vol.104 (2), p.583-586
Main Authors: Sellers, Meredith C. K., Seebauer, Edmund G.
Format: Article
Language:English
Subjects:
Anatase
Characterization and Evaluation of Materials
Concentration (composition)
Condensed Matter Physics
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Density
Deposition
Exact sciences and technology
Machines
Magnetic properties and materials
Magnetic properties of monolayers and thin films
Magnetic properties of surface, thin films and multilayers
Manganese
Manufacturing
Microstructure
Nanotechnology
Optical and Electronic Materials
Physics
Physics and Astronomy
Processes
Surfaces and Interfaces
Thin Films
Titanium dioxide
X-rays
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Summary:Mn-doped anatase TiO 2 (Mn: 1.2, 2.4 at%) thin films were grown on Si(100) via atomic layer deposition (ALD). The synthesis utilized Ti(OCH(CH 3 ) 2 ) 4 and H 2 O as ALD precursors and Mn(DPM) 3 as a dopant source. X-ray photoelectron spectroscopy measurements indicate that Mn is successfully doped in the TiO 2 matrix and reveal information about film composition and elemental chemical states. Microstructure, crystallinity, and density were investigated with scanning electron microscopy, X-ray diffraction, and X-ray reflectivity. All ALD-synthesized films exhibited room-temperature ferromagnetism; the microstructure, density, and magnetic field-dependent magnetization of the TiO 2 varied with the concentration of Mn. ALD permits precise composition and thickness control, and much higher process throughput compared to alternative techniques.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-011-6308-1