The influence of nickel concentration on photoluminescence spectra of ZnSe:Ni samples

Photoluminescence (PL) spectra of ZnSe samples grown by iodine transport method and doped with Ni during the growth process and grown from the melt and doped with Ni by diffusion from a gas phase are investigated in visible and infrared (IR) ranges at 77 and 300 K. It is shown that under sub-band ex...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2011-10, Vol.406 (20), p.3851-3855
Main Authors: Nedeoglo, D.D., Nedeoglo, N.D., Sobolevskaia, R.L., Sushkevich, K.D., Dvornikov, D.P., Nicorici, A.V.
Format: Article
Language:English
Subjects:
Condensed matter
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Defects
Exact sciences and technology
Excitation
Ii-vi semiconductors
Infrared
Infrared radiation
Luminescence
Nickel
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Semiconducting II–VI materials
Spectra
Transition metals
Zinc selenides
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Summary:Photoluminescence (PL) spectra of ZnSe samples grown by iodine transport method and doped with Ni during the growth process and grown from the melt and doped with Ni by diffusion from a gas phase are investigated in visible and infrared (IR) ranges at 77 and 300 K. It is shown that under sub-band excitation, the PL spectra for the undoped samples of both types are similar and may be attributed to self-activated luminescence with participation of iodine- and V Zn-based centres. The PL study for ZnSe samples doped with Ni carried out at various Ni concentrations, temperatures, and excitation intensities gives reason to ascribe the observed bands in near-IR and IR ranges to 3 T 2( F)→ 3 T 1( F) and 3 T 1( P)→ 3 T 1( F) intracentre transitions within the Ni Zn 2+(d 8) ion.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2011.07.009