Demonstration of nanophotonic NOT gate using near-field optically coupled quantum dots

We propose and demonstrate the operation of a nanometric optical NOT gate using CuCl quantum dots coupled via an optical near-field interaction. The device was smaller than 20 nm and its repeated operation was verified. The operating energy of this device was much lower than that of a conventional p...

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Bibliographic Details
Published in:Applied physics. B, Lasers and optics Lasers and optics, 2006-07, Vol.84 (1-2), p.243-246
Main Authors: Kawazoe, T., Kobayashi, K., Akahane, K., Naruse, M., Yamamoto, N., Ohtsu, M.
Format: Article
Language:English
Subjects:
Devices
Double layer
Epitaxial growth
Gates
Nanocomposites
Nanomaterials
Nanostructure
Quantum dots
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Summary:We propose and demonstrate the operation of a nanometric optical NOT gate using CuCl quantum dots coupled via an optical near-field interaction. The device was smaller than 20 nm and its repeated operation was verified. The operating energy of this device was much lower than that of a conventional photonic device. We also introduce all-optical NAND and NOR gates using coupled quantum dots. Toward an actual nanophotonic device, we discuss the possibility of coupled InAlAs quantum dots. A double layer of InAlAs quantum dots for nanophotonic device operation was prepared using molecular beam epitaxial growth. We obtained a near-field spectroscopy signal, indicating that the InAlAs quantum dots coupled with the optical near field acted as a NOT gate. The experimental results show that the sample has great potential as an actual nanophotonic device.
ISSN:0946-2171
1432-0649
DOI:10.1007/s00340-006-2234-x