Dielectric response of AlP by in-situ ellipsometry

• Published in: Thin solid films 2011-09, Vol.519 (22), p.8027-8029
• Main Authors: Jung, Y.W., Byun, J.S., Hwang, S.Y., Kim, Y.D., Shin, S.H., Song, J.D.
• Format: Article
• Language: English
• Subjects: Aluminum phosphide; Cross-disciplinary physics: materials science; rheology; Dielectric response; Dielectrics; Ellipsometry; Exact sciences and technology; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular beam epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Optical instruments, equipment and techniques; Physics; Polarimeters and ellipsometers; Semiconductor parametric model; Thin films
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2011.06.015

We present and analyze pseudodielectric function data < ε> = < ε 1> + i< ε 2> of AlP from 0.75 to 5.05 eV. The sample is a 1.0 μm thick AlP film grown on (001) GaAs by molecular beam epitaxy (MBE). Spectroscopic ellipsometric data were obtained before removing the sample from the MBE chamber to avoid oxidation and related artifacts. Analysis of interference oscillations and corrections for overlayer effects with a multilayer parametric model yield the closest representation to date of the intrinsic bulk dielectric response ε of AlP. From this analysis we obtain the energies of the E 0′ and E 1 critical points of AlP.