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Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature

Single‐ and multilayer MoS2 films are deposited onto Si/SiO2 using the mechanical exfoliation technique. The films were then used for the fabrication of field‐effect transistors (FETs). These FET devices can be used as gas sensors to detect nitrous oxide (NO). Although the single‐layer MoS2 device s...

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Bibliographic Details
Published in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2012-01, Vol.8 (1), p.63-67
Main Authors: Li, Hai, Yin, Zongyou, He, Qiyuan, Li, Hong, Huang, Xiao, Lu, Gang, Fam, Derrick Wen Hui, Tok, Alfred Iing Yoong, Zhang, Qing, Zhang, Hua
Format: Article
Language:English
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Summary:Single‐ and multilayer MoS2 films are deposited onto Si/SiO2 using the mechanical exfoliation technique. The films were then used for the fabrication of field‐effect transistors (FETs). These FET devices can be used as gas sensors to detect nitrous oxide (NO). Although the single‐layer MoS2 device shows a rapid response after exposure to NO, the current was found to be unstable. The two‐, three‐, and four‐layer MoS2 devices show both stable and sensitive responses to NO down to a concentration of 0.8 ppm.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.201101016