High efficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solution epitaxy

Heteroepitaxial ZnO transparent current spreading layers with low sheet resistances were deposited on GaN-based light emitting diodes using aqueous solution phase epitaxy at temperatures below 90°C. The performance of the LEDs was analyzed and compared to identical devices using electron-beam evapor...

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Bibliographic Details
Published in:Optics express 2012-01, Vol.20 (1), p.A13-A19
Main Authors: Reading, Arthur H, Richardson, Jacob J, Pan, Chih-Chien, Nakamura, Shuji, DenBaars, Steven P
Format: Article
Language:English
Subjects:
Color
Crystallization
Equipment Design
Equipment Failure Analysis
Lighting - instrumentation
Semiconductors
Solutions
Water - chemistry
Zinc Oxide - chemistry
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Summary:Heteroepitaxial ZnO transparent current spreading layers with low sheet resistances were deposited on GaN-based light emitting diodes using aqueous solution phase epitaxy at temperatures below 90°C. The performance of the LEDs was analyzed and compared to identical devices using electron-beam evaporated indium tin oxide transparent current spreading layers. White LEDs with ZnO layers provided high luminous efficacy–157 lm/W at 0.5A/cm2, and 84.8 lm/W at 35A/cm2, 24% and 50% higher, respectively, than devices with ITO layers. The improvement appears to be due to the enhanced current spreading and low optical absorption provided by the ZnO.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.20.000A13