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The effects of vacuum annealing on the film properties of titanium boride (TiBx) grown on (100)Si substrate

In order to investigate the effects of vacuum annealing on the properties of titanium boride films (TiBx) on a (100)Si substrate, TiBx/Si samples were prepared by the co-evaporation process and then annealed in the temperature range of 300[asymptotically =]1000°C. The interfacial reaction of TiBx/Si...

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Bibliographic Details
Published in:Metals and materials international 2001-07, Vol.7 (4), p.359-365
Main Authors: Lee, Young-Ki, Kim, Jung-Yuel, Lee, You-Kee, Lee, Min-Sang, Lee, Cheul-Ro, Park, Dong-Koo
Format: Article
Language:English
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Summary:In order to investigate the effects of vacuum annealing on the properties of titanium boride films (TiBx) on a (100)Si substrate, TiBx/Si samples were prepared by the co-evaporation process and then annealed in the temperature range of 300[asymptotically =]1000°C. The interfacial reaction of TiBx/Si systems and the thermal stability of non-stoichiometric TiBx films (0≤B/Ti≤2.5) were investigated by means of sheet resistance, x-ray diffraction, transmission electron microscopy, x-ray photo-electron spectroscopy, and stress measurement. For TiBx samples with a ratio of B/Ti≥2.0, an apparent structural change is not observed even after annealing at 1000°C for 1 h. For samples with the ratio of B/Ti
ISSN:1598-9623
2005-4149
1234-4320
DOI:10.1007/BF03186080