Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates

Metal-insulator-semiconductor field effect transistors (MISFETs) from surface-passivated undoped AlGaN/GaN heterostructures on sapphire were fabricated. Measured static output characteristics includes full channel currents (I/sub dss/) of roughly 750 mA/mm with gate-source pinchoff voltages of -10 V...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2001-03, Vol.48 (3), p.416-419
Main Authors: Chumbes, E.M., Smart, J.A., Prunty, T., Shealy, J.R.
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Devices
Electric potential
Field effect transistors
Gallium nitrides
Gates
MISFETs
Sapphire
Semiconductors
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Summary:Metal-insulator-semiconductor field effect transistors (MISFETs) from surface-passivated undoped AlGaN/GaN heterostructures on sapphire were fabricated. Measured static output characteristics includes full channel currents (I/sub dss/) of roughly 750 mA/mm with gate-source pinchoff voltages of -10 V and peak extrinsic transconductancies (g/sub m/) of 100-110 mS/mm. Increased surface roughness resulting from a gate recess process to reduce the pinchoff voltage introduces gate leakage currents in the micro-amps regime. With evidence for reduced dc-to-rf dispersion from pulsed gate transfer characteristics, these devices at 4 GHz with 28.0 V bias generated maximum output power densities of 4.2 W/mm with 14.5 dB of gain and 36% power added efficiency.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.906429