Formation of lateral thin-film 700-V insulated-gate bipolar transistors by using retrograde p-well double implantation scheme

Formation of lateral thin-film 700-V insulated-gate bipolar transistors (IGBTs) on Si-semiconductor-on-insulator (Si-SOI) substrates by using retrograde p-well double implantation scheme has been proposed. With a low thermal budget for p-well formation, retrograde high-energy boron implantation is e...

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Bibliographic Details
Published in:Microelectronic engineering 2011-10, Vol.88 (10), p.3119-3122
Main Authors: Juang, M.-H., Shen, D.-H., Jang, S.-L.
Format: Article
Language:English
Subjects:
Applied sciences
Bipolar transistors
Boron
Condensed matter: structure, mechanical and thermal properties
Dopants
Electric potential
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Implantation
Latch-up
Lateral thin-film insulated-gate bipolar transistors
MOSFETs
Other multijunction devices. Power transistors. Thyristors
Physics
Retrograde p-well double implantation
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Thermal properties of condensed matter
Thermal properties of crystalline solids
Thermodynamic properties
Thin films
Transistors
Voltage
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Summary:Formation of lateral thin-film 700-V insulated-gate bipolar transistors (IGBTs) on Si-semiconductor-on-insulator (Si-SOI) substrates by using retrograde p-well double implantation scheme has been proposed. With a low thermal budget for p-well formation, retrograde high-energy boron implantation is employed to cause a high dopant concentration in the bulk region, and additional low-energy boron implantation is carried out for alleviating the surface punch-through of MOSFET (metal-oxide-semiconductor-field-effect-transistor) structure. As compared to the conventional p-well formation process, the retrograde double implantation scheme can lead to better latchup immunity, due to a considerably higher dopant concentration and thus lower well resistance in the p-well bulk region. In addition, owing to a lower surface dopant concentration, the retrograde double implantation scheme can lead to better on-state characteristics than the conventional process, while achieving comparable blocking voltage.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2011.06.010