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Photoluminescence of Si-based nanotips fabricated by anodic aluminum oxide template
► Large-area, high-density and uniform Si-based nanotips by ECL method. ► Si-based nanotips on Si and GeSi/Si supperlattice substrates. ► Photoluminescent peak centered at 585 nm with a FWHM of 24 nm. ► No evident peak energy shift when the measurement temperature increases. Large-area, high-density...
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Published in: | Applied surface science 2011-10, Vol.257 (24), p.10671-10673 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | ► Large-area, high-density and uniform Si-based nanotips by ECL method. ► Si-based nanotips on Si and GeSi/Si supperlattice substrates. ► Photoluminescent peak centered at 585
nm with a FWHM of 24
nm. ► No evident peak energy shift when the measurement temperature increases.
Large-area, high-density silicon-based nanotips were fabricated using electrochemical lithography. The morphology and optical properties of the samples were characterized by atomic force microscopy and photoluminescence. The distribution and size of the silicon-based nanotips were uniform. Two photoluminescence peaks were observed at 585 and 620
nm. The peak centered at 585
nm exhibited a narrow full-width at half maximum. No evident peak energy shift was observed when the measurement temperature was increased from 10
K to room temperature, which suggested that the photoluminescence should be attributed to the interface states and/or defects in the silicon-based nanotips. |
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ISSN: | 0169-4332 1873-5584 |
DOI: | 10.1016/j.apsusc.2011.07.073 |