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Photoluminescence of Si-based nanotips fabricated by anodic aluminum oxide template

► Large-area, high-density and uniform Si-based nanotips by ECL method. ► Si-based nanotips on Si and GeSi/Si supperlattice substrates. ► Photoluminescent peak centered at 585 nm with a FWHM of 24 nm. ► No evident peak energy shift when the measurement temperature increases. Large-area, high-density...

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Bibliographic Details
Published in:Applied surface science 2011-10, Vol.257 (24), p.10671-10673
Main Authors: Li, Yangjuan, Huang, Kai, Lai, Hongkai, Li, Cheng, Chen, Songyan, Kang, Junyong
Format: Article
Language:English
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Summary:► Large-area, high-density and uniform Si-based nanotips by ECL method. ► Si-based nanotips on Si and GeSi/Si supperlattice substrates. ► Photoluminescent peak centered at 585 nm with a FWHM of 24 nm. ► No evident peak energy shift when the measurement temperature increases. Large-area, high-density silicon-based nanotips were fabricated using electrochemical lithography. The morphology and optical properties of the samples were characterized by atomic force microscopy and photoluminescence. The distribution and size of the silicon-based nanotips were uniform. Two photoluminescence peaks were observed at 585 and 620 nm. The peak centered at 585 nm exhibited a narrow full-width at half maximum. No evident peak energy shift was observed when the measurement temperature was increased from 10 K to room temperature, which suggested that the photoluminescence should be attributed to the interface states and/or defects in the silicon-based nanotips.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2011.07.073