DIBL-Induced Program Disturb Characteristics in 32-nm NAND Flash Memory Array

In this brief, we have investigated the program disturb characteristics caused by drain-induced barrier lowering (DIBL) in a 32-nm nand Flash memory device. It was found that the V TH shift of the ( N + 2)th erased state cell is larger than that of the ( N + 1)th erased state cell if it is assumed t...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2011-10, Vol.58 (10), p.3626-3629
Main Authors: KANG, Myounggon, HAHN, Wookghee, JANG, Seunghyun, CHO, Seongjae, PARK, Byung-Gook, SHIN, Hyungcheol, IL HAN PARK, PARK, Juyoung, SONG, Youngsun, LEE, Hocheol, EUN, Changgyu, JU, Sanghyun, CHOI, Kihwan, LIM, Youngho
Format: Article
Language:English
Subjects:
Applied sciences
Arrays
Barriers
Cell-to-cell interference
Channels
Circuit properties
Couplings
Current measurement
Cut off
Design. Technologies. Operation analysis. Testing
Devices
Digital circuits
drain-induced barrier lowering (DIBL)
Electric potential
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Flash memory
Flash memory (computers)
gate-induced drain leakage (GIDL)
hot-carrier injection (HCI)
Integrated circuits
Integrated circuits by function (including memories and processors)
Interference
Joining
Logic gates
Magnetic and optical mass memories
nand string
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Storage and reproduction of information
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Summary:In this brief, we have investigated the program disturb characteristics caused by drain-induced barrier lowering (DIBL) in a 32-nm nand Flash memory device. It was found that the V TH shift of the ( N + 2)th erased state cell is larger than that of the ( N + 1)th erased state cell if it is assumed that the channel of the N th cell is cut off. It is revealed that the cut off is caused by a cell-to-cell coupling effect that is becoming more severe in the development of high-density Flash memory arrays.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2011.2161313