Epitaxial growth and electrical-transport properties of Ti7Si2C5 thin films synthesized by reactive sputter-deposition

Epitaxial predominantly phase-pure Ti7Si2C5 thin films were grown onto Al2O3(0001) by reactive magnetron sputtering. The c-axis lattice constant is a arrow right 460.2Aa; the Ti7Si2C5 unit cell comprises alternating Ti3SiC2-like and Ti4SiC3-like half-unit-cell stacking repeated three times. Elastic...

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Bibliographic Details
Published in:Scripta materialia 2011-11, Vol.65 (9), p.811-814
Main Authors: Scabarozi, T.H., Hettinger, J.D., Lofland, S.E., Lu, J., Hultman, L., Jensen, J., Eklund, P.
Format: Article
Language:English
Subjects:
Acetylene
Electrical resistivity
Epitaxial growth
Lattice parameters
Stabilization
Stacking
Temperature dependence
Thin films
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Summary:Epitaxial predominantly phase-pure Ti7Si2C5 thin films were grown onto Al2O3(0001) by reactive magnetron sputtering. The c-axis lattice constant is a arrow right 460.2Aa; the Ti7Si2C5 unit cell comprises alternating Ti3SiC2-like and Ti4SiC3-like half-unit-cell stacking repeated three times. Elastic recoil detection analysis showed a few percent of nitrogen in the films from the acetylene gas used. The nitrogen-induced stabilization mechanism for Ti7Si2C5 relative to Ti3SiC2 and Ti4SiC3 is discussed. Electrical-transport measurements showed metallic temperature dependence and a room-temperature resistivity of a arrow right 445 mu Omega cm.
ISSN:1359-6462
DOI:10.1016/j.scriptamat.2011.07.038