Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing

• Published in: Vacuum 2011-10, Vol.86 (3), p.246-249
• Main Authors: Chiu, C.J., Pei, Z.W., Chang, S.T., Chang, S.P., Chang, S.J.
• Format: Article
• Language: English
• Subjects: a-IGZO; Annealing; Deposition; High mobility; Indium; Partial pressure; Polymer; Semiconductor devices; TFT; Thin film transistors; Transistors; Zinc oxide
• ISSN: 0042-207X; 1879-2715
• DOI: 10.1016/j.vacuum.2011.06.014

We report the fabrication and electrical characteristics of high-performance amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with a polymer gate dielectric prepared by spin coating on a glass substrate at different oxygen partial pressure values. The transmittance of the deposited polymer film was greater than 90% at 600 nm a-IGZO thin films were deposited on glass substrates using RF magnetron sputtering at different oxygen partial pressure values. The a-IGZO TFTs were prepared by rapid thermal annealing at 350 °C for 10 min at a 0.2% oxygen partial pressure. It was observed that a-IGZO TFTs with an active channel layer exhibited enhanced mode operation, a threshold voltage of 1 V, an on-off current ratio of 10 3, and a field-effect mobility of 18 cm 2/Vs. ► Fabricated a-IGZO TFTs with a polymer gate dielectric prepared by spin coating. ► Discussed the electrical performance under different oxygen partial pressures. ► The transmittance of the deposited polymer film was greater than 90% at 600 nm. ► The polymer film used is optically usable as the gate dielectric of a-IGZO TFTs.