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Size and distribution of Te inclusions in THM as-grown CZT wafers: The effect of the rate of crystal cooling

The concentration and size distribution of Te inclusions/precipitates in CZT are key factors in a device's performance. High concentrations can degrade the performance drastically, especially for long drift-length devices (more than about 10-mm thick). Here, we extend our previous findings on t...

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Bibliographic Details
Published in:Journal of crystal growth 2011-10, Vol.332 (1), p.34-38
Main Authors: Roy, U.N., Weiler, S., Stein, J., Hossain, A., Camarda, G.S., Bolotnikov, A.E., James, R.B.
Format: Article
Language:English
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Summary:The concentration and size distribution of Te inclusions/precipitates in CZT are key factors in a device's performance. High concentrations can degrade the performance drastically, especially for long drift-length devices (more than about 10-mm thick). Here, we extend our previous findings on the concentration and size distribution of Te inclusions/precipitates in CZT wafers grown by the THM technique, by considering the rate of cooling of the ingots. We measured their distribution along the diameter of the wafers in a conventional slow-cooled and a fast-cooled ingot. The overall average concentration of Te inclusions/precipitates for the slow-cooled sample was less than 1×10 5 cm −3, attesting to their suitability for fabricating thick radiation-detection devices. ► THM growth of CdZnTe and Te inclusion/precipitates mapping was carried out. ► Mapping of Te inclusions/precipitates of as-grown CZT by THM, for the first time. ► The size, distribution, and concentrations were less/comparable to the commercial CZT. ► Effect of the rate of cooling on concentration of Te inclusions/precipitates was studied.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2011.07.025