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Size and distribution of Te inclusions in THM as-grown CZT wafers: The effect of the rate of crystal cooling
The concentration and size distribution of Te inclusions/precipitates in CZT are key factors in a device's performance. High concentrations can degrade the performance drastically, especially for long drift-length devices (more than about 10-mm thick). Here, we extend our previous findings on t...
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Published in: | Journal of crystal growth 2011-10, Vol.332 (1), p.34-38 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The concentration and size distribution of Te inclusions/precipitates in CZT are key factors in a device's performance. High concentrations can degrade the performance drastically, especially for long drift-length devices (more than about 10-mm thick). Here, we extend our previous findings on the concentration and size distribution of Te inclusions/precipitates in CZT wafers grown by the THM technique, by considering the rate of cooling of the ingots. We measured their distribution along the diameter of the wafers in a conventional slow-cooled and a fast-cooled ingot. The overall average concentration of Te inclusions/precipitates for the slow-cooled sample was less than 1×10
5
cm
−3, attesting to their suitability for fabricating thick radiation-detection devices.
► THM growth of CdZnTe and Te inclusion/precipitates mapping was carried out. ► Mapping of Te inclusions/precipitates of as-grown CZT by THM, for the first time. ► The size, distribution, and concentrations were less/comparable to the commercial CZT. ► Effect of the rate of cooling on concentration of Te inclusions/precipitates was studied. |
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ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/j.jcrysgro.2011.07.025 |