Growth of homogeneous polycrystalline Si1-xGex and Mg2Si1-xGex for thermoelectric application

Homogeneous polycrystalline Si1-xGex were grown using a Si(seed)/Ge/Si(feed) sandwich structure under the low temperature gradient less than 0.4 degree C/mm. It was found that the composition of the Si1-xGex was controlled by the growth temperature. The homogeneous Mg2Si1-xGex was synthesized by hea...

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Bibliographic Details
Published in:Thin solid films 2011-10, Vol.519 (24), p.8532-8537
Main Authors: HAYAKAWA, Yasuhiro, ARIVANANDHAN, Mukannan, BHATTACHARYA, Shovit, ASWAL, Dinesh Kumar, BABU, Sridharan Moorthy, INATOMI, Yuko, TATSUOKA, Hirokazu, SAITO, Yosuke, KOYAMA, Tadanobu, MOMOSE, Yoshimi, IKEDA, Hiroya, TANAKA, Akira, WEN, Cuilian, KUBOTA, Yoshihiro, NAKAMURA, Tamotsu
Format: Article
Language:English
Subjects:
Coefficients
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Density
Electrical properties of specific thin films
Electrical resistivity
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport phenomena in thin films and low-dimensional structures
Exact sciences and technology
Germanium
Growth from solutions
Materials science
Methods of crystal growth
physics of crystal growth
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Silicon
Spark plasma sintering
Theory and models of film growth
Thermoelectric effects
Thermoelectricity
Thin films
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Summary:Homogeneous polycrystalline Si1-xGex were grown using a Si(seed)/Ge/Si(feed) sandwich structure under the low temperature gradient less than 0.4 degree C/mm. It was found that the composition of the Si1-xGex was controlled by the growth temperature. The homogeneous Mg2Si1-xGex was synthesized by heat treatment of the homogeneous Si1-xGex powders under Mg vapor. The Mg2Si1-xGex sample with the relative density of 95% was synthesized by spark plasma sintering technique. The resistivity and the Seebeck coefficient of the Si, Ge, Si1-xGex and Mg2Si1-xGex samples were evaluated as a function of temperature. It indicated that Seebeck coefficients of the Si1-xGex and Mg2Si1-xGex samples were higher than those of Si and Ge. Moreover, the Seebeck coefficient of Mg2Si0.7Ge0.3 sample was higher than that of Mg2Si0.5Ge0.5 and Si0.5Ge0.5 samples.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2011.05.033