Deep donor center in Ge1 − xSix〈Cu,In,Sb〉 crystals at 1050–1080 K

Hall effect measurements demonstrate that quenching of Ge 1 − x Si x 〈Cu,In,Sb〉 (0 ≤ x ≤ 0.20) multiply doped crystals from 1050–1080 K leads to the formation of additional deep donor centers. The energy level of the centers is located in the bottom half of the band gap of the Ge 1 − x Si x crystals...

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Bibliographic Details
Published in:Inorganic materials 2010-12, Vol.46 (12), p.1285-1289
Main Authors: Azhdarov, G. Kh, Zeynalov, Z. M., Kyazimova, V. K., Huseynli, L. A.
Format: Article
Language:English
Subjects:
Annealing
Chemistry
Chemistry and Materials Science
Copper
Crystals
Doped crystals
Energy levels
Indium
Industrial Chemistry/Chemical Engineering
Inorganic Chemistry
Materials Science
Quenching
Silicon
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Summary:Hall effect measurements demonstrate that quenching of Ge 1 − x Si x 〈Cu,In,Sb〉 (0 ≤ x ≤ 0.20) multiply doped crystals from 1050–1080 K leads to the formation of additional deep donor centers. The energy level of the centers is located in the bottom half of the band gap of the Ge 1 − x Si x crystals and is a linear function of host composition. Annealing the crystals at 550–570 K completely eliminates the additional donor levels. The most likely model of the additional deep donors is a pair of substitutional copper and indium atoms (Cu s In s ) or a complex of a copper interstitial and a substitutional indium atom (Cu i In s ).
ISSN:0020-1685
1608-3172
DOI:10.1134/S0020168510120022