The role of the source and drain contacts on self-heating effect in nanowire transistors

We find that self-heating effects are not pronounced in silicon nanowire transistors with channel length 10 nm even in the presence of the wrap-around oxide. We observe a maximum current degradation of 6% for V G = V D =1.0 V in a structure in which the metal gates are far away from the channel. The...

Full description

Saved in:
Bibliographic Details
Published in:Journal of computational electronics 2010-12, Vol.9 (3-4), p.180-186
Main Authors: Vasileska, D., Hossain, A., Raleva, K., Goodnick, S. M.
Format: Article
Language:English
Subjects:
Applied sciences
Channels
Cross-disciplinary physics: materials science
rheology
Degradation
Electrical Engineering
Electronics
Engineering
Exact sciences and technology
Heating
High temperature effects
Materials science
Mathematical and Computational Engineering
Mathematical and Computational Physics
Mechanical Engineering
Nanocomposites
Nanomaterials
Nanoscale materials and structures: fabrication and characterization
Nanostructure
Nanowires
Optical and Electronic Materials
Physics
Quantum wires
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature profiles
Theoretical
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We find that self-heating effects are not pronounced in silicon nanowire transistors with channel length 10 nm even in the presence of the wrap-around oxide. We observe a maximum current degradation of 6% for V G = V D =1.0 V in a structure in which the metal gates are far away from the channel. The overall small current degradation is attributed to the significant velocity overshoot effect in these structures. The lattice temperature profile shows moderate temperature rise and velocity of the carriers is slightly deteriorated due to self-heating effects when compared to isothermal simulations.
ISSN:1569-8025
1572-8137
DOI:10.1007/s10825-010-0334-7