Long wavelength infrared detection using amorphous InSb and InAs sub(0.3Sb) sub(0).7

The structural, electronic, and optical properties of amorphous InSb and InAs sub(0.3Sb) sub(0).7 films deposited on Corning glass, Al sub(2O) sub(3) CdZnTe, SiO sub(2-Si, and CaF) sub(2) substrates by Radio Frequency (RF) magnetron sputtering have been studied as they relate to Mid and Long Wavelen...

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Bibliographic Details
Published in:Journal of crystal growth 2011-11, Vol.334 (1), p.84-89
Main Authors: Zens, Timothy, Becla, Piotr, Agarwal, Anuradha M, Kimerling, Lionel C, Drehman, Alvin
Format: Article
Language:English
Subjects:
Deposition
Indium antimonides
Infrared
Intermetallics
Radio frequencies
Silicon dioxide
Thick films
Wavelengths
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Summary:The structural, electronic, and optical properties of amorphous InSb and InAs sub(0.3Sb) sub(0).7 films deposited on Corning glass, Al sub(2O) sub(3) CdZnTe, SiO sub(2-Si, and CaF) sub(2) substrates by Radio Frequency (RF) magnetron sputtering have been studied as they relate to Mid and Long Wavelength Infrared (MWIR and LWIR) detection. Depositions at elevated substrate temperature and pressure of 10 mTorr Ar showed an emergence of crystalline grains with strong X-ray diffraction peaks at the (111) and (220) orientations. Electronically, the amorphous InSb and InAs sub(0.3Sb) sub(0).7 films deposited at 300 K show hopping conduction with resistance in InSb ranging from 44 to 1.1E8 [omega]-cm at 300 K and 84 K, respectively. Optical analysis using Fourier transform infrared spectroscopy (FTIR) shows the absorption of these films has an absorption tail, which shows the differing activation energies in InSb and InAs sub(0.3Sb) sub(0).7. Amorphous InSb and InAs sub(0.3Sb) sub(0).7 films showed responsivity in excess of 100 V/W for 6 mu m thick films held at 233 K.
ISSN:0022-0248
DOI:10.1016/j.jcrysgro.2011.08.016