Negative Differential Resistance in Mono and Bilayer Graphene p-n Junctions

In this letter, we study the electrical characteristics of monolayer and bilayer graphene p-n junctions through the self-consistent solution of the 2-D Poisson and Schrödinger equations within the Non-Equilibrium Green's Function (NEGF) formalism. Negative differential resistance is observed i...

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Bibliographic Details
Published in:IEEE electron device letters 2011-10, Vol.32 (10), p.1334-1336
Main Author: Fiori, G.
Format: Article
Language:English
Subjects:
Analytical models
Anodes
Applied sciences
Bilayer graphene
Cathodes
Compound structure devices
Devices
Diodes
Electronics
Esaki diodes
Exact sciences and technology
Exact solutions
Formalism
Graphene
Mathematical analysis
Mathematical model
Mathematical models
monolayer
NEGF
P-n junctions
quantum tunneling
Resistance
Schroedinger equation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:In this letter, we study the electrical characteristics of monolayer and bilayer graphene p-n junctions through the self-consistent solution of the 2-D Poisson and Schrödinger equations within the Non-Equilibrium Green's Function (NEGF) formalism. Negative differential resistance is observed in both devices at room temperatures, which opens the possibility of exploiting graphene in analog electronics. An analytical expression, which is suitable for a fast exploration along the parameter space, is provided and compared against the tight-binding model, showing good agreement.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2162392