Mapping ion beam induced current changes in a commercial MOSFET

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2011-10, Vol.269 (20), p.2355-2359
• Main Authors: Alves, A.D.C., Thompson, S., Yang, C., Jamieson, D.N.
• Format: Article
• Language: English
• Subjects: Channels; Charge; Current transient; Devices; Drain current modulation; Drains; Electric charge; Ion beam induced charge (IBIC); Ion beams; Ionization; Metal-oxide-semiconductor field effect transistor (MOSFET); Single ion detection; Strikes
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/j.nimb.2011.02.073

We demonstrate a novel nuclear microprobe imaging and analysis modality for micrometre-scale field effect transistor devices probed with focused beams of MeV ions. By recording the drain current as a function of time during ion irradiation it is possible to identify current transients induced by the passage of single ions through the sensitive structures of the device. This modality takes advantage of the fact that the ionization produced by the passage of a single ion acts in an equivalent way to a transient change in the gate bias which therefore modulates the drain current as a function of time. This differs from the traditional ion beam induced charge technique where the ionization drifts in an internal electric field and induces a single charge pulse in an electrode applied to the device. Instead a richer variety of phenomena are observed, with different time constants which depend on the proximity of the ion strike to the channel of the device. The signals may be used to examine device function, radiation sensitivity or to count ion impacts within the channel.