A practical model for the determination of transport parameters in semiconductors

In this paper a new and practical model for the determination of transport parameters of crystalline semiconductors, by means of the photoacoustic technique is reported. The model is based on the calculation of the photoacoustic signal for the so-called heat transmission configuration, and considers...

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Bibliographic Details
Published in:Journal of materials science 2011-12, Vol.46 (24), p.7799-7805
Main Authors: Rojas-Trigos, J.B, Calderon, A, Marin, E
Format: Article
Language:English
Subjects:
Analysis
Boundary conditions
Characterization and Evaluation of Materials
Chemistry and Materials Science
Classical Mechanics
Crystal lattices
Crystallography and Scattering Methods
Current carriers
Diffusion
Dirichlet problem
Electromagnetic absorption
Fittings
Heat sources
Heat transmission
Materials Science
Mathematical models
Parameters
Polymer Sciences
Semiconductor materials
Semiconductors
Silicon wafers
Solid Mechanics
Thermal response
Transport
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Summary:In this paper a new and practical model for the determination of transport parameters of crystalline semiconductors, by means of the photoacoustic technique is reported. The model is based on the calculation of the photoacoustic signal for the so-called heat transmission configuration, and considers that the thermal response to periodical heating, due to light absorption, in semiconductor materials has mainly two contributions: (a) the vibrations of the crystal lattice (phonon contribution) and (b) the diffusion and recombination (bulk and superficial) of the photogenerated charge carriers. Considering these contributions as the heat sources, and using unmixed Dirichlet and Neumann boundary conditions, the solution of the heat diffusion equation, necessary for the calculation of the photoacoustic signal is obtained. In addition, an expression—describing a particular transport regime—that can be used as practical fitting function, for the more available experimental conditions, is developed. Finally, values of transport parameters for silicon wafers are obtained by fitting this model to the experimental data, showing a good agreement with the values quoted in literature.
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-011-5760-9