Tungsten thin-film deposition on a silicon wafer: The formation of silicides at W-Si interface

The interphase boundary formed in the process of tungsten thin-film deposition on a silicon wafer is investigated. These films are produced via (1) a CVD technique relying on hydrogen reduction of tungsten hexafluoride, (2) the same technique supplemented with plasmochemical action, and (3) magnetro...

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Bibliographic Details
Published in:Inorganic materials 2009-02, Vol.45 (2), p.140-144
Main Authors: Plyushcheva, S. V., Mikhailov, G. M., Shabel’nikov, L. G., Shapoval, S. Yu
Format: Article
Language:English
Subjects:
Boundaries
Chemical vapor deposition
Chemistry
Chemistry and Materials Science
Deposition
Industrial Chemistry/Chemical Engineering
Inorganic Chemistry
Materials Science
Silicides
Silicon
Surface resistance
Thin films
Tungsten
Wafers
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Summary:The interphase boundary formed in the process of tungsten thin-film deposition on a silicon wafer is investigated. These films are produced via (1) a CVD technique relying on hydrogen reduction of tungsten hexafluoride, (2) the same technique supplemented with plasmochemical action, and (3) magnetron deposition used for comparison purposes. It is shown that a nanometer tungsten silicide W 5 Si 3 layer is formed at the tungsten-silicon interface only under gas-phase deposition. The effect of annealing on the specimen composition and surface resistance is investigated. It is shown that the formation and growth of a silicide WSi 2 layer commences at 700°C for CVD films and at above 750°C for films obtained with plasmochemical deposition; this results in a drastic increase in their electrical resistance. Under optimal conditions, tungsten films of 8 × 10 −6 Ω cm resistivity are produced.
ISSN:0020-1685
1608-3172
DOI:10.1134/S002016850902006X