Nitrogen Incorporation in HfSiO(N)/TaN Gate Stacks: Impact on Performances and NBTI

Performance and negative-bias temperature instability (NBTI) on atomic-layer-deposited HfSiON metal-gated pMOSFETs are investigated. The impact of nitrogen incorporation either with plasma nitridation or NH 3 anneal is studied and compared to the nonnitrided stacks. The capacitance equivalent thickn...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2007-07, Vol.28 (7), p.613-615
Main Authors: Aoulaiche, M., Houssa, M., Deweerd, W., Trojman, L., Conard, T., Maes, J.W., De Gendt, S., Groeseneken, G., Maes, H.E., Heyns, M.M.
Format: Article
Language:English
Subjects:
Annealing
Applied sciences
Capacitance
Devices
Electronics
Engineering Sciences
Equivalence
Exact sciences and technology
Gate devices
Gates
high- kappa
Instability
Ion nitriding
Micro and nanotechnologies
Microelectronics
MOSFETs
negative-bias temperature instability (NBTI)
Niobium base alloys
Niobium compounds
Nitrogen
Personal digital assistants
Plasma chemistry
Plasma temperature
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Stacks
Titanium compounds
transistor performance
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Performance and negative-bias temperature instability (NBTI) on atomic-layer-deposited HfSiON metal-gated pMOSFETs are investigated. The impact of nitrogen incorporation either with plasma nitridation or NH 3 anneal is studied and compared to the nonnitrided stacks. The capacitance equivalent thickness reduction that is observed in nitrided stacks is compensated by the slight decrease of the hole mobility for the same gate overdrive, resulting in no improvement of the performance. On the other hand, it is shown that nitridation strongly enhances NBTIs in these devices. Based on these results, the necessity of nitrogen incorporation in thin HfSiON/metal gate stacks should be reconsidered.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2007.899435