Production of double-layer epitaxial structures based on the solid solution of the Cd-Hg-Te system using a combination of LPE and MOCVD techniques

The technique of growing CdTe and Cd x Hg 1 − x Te layers utilizing chemical metalloorganic compound vapor deposition (MOCVD) onto a CdZnTe(111) substrate with a preliminarily deposited Cd y Hg 1 − y Te layer using liquid phase epitaxy (LPE) has been developed. No noticeable changes in the electroph...

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Bibliographic Details
Published in:Inorganic materials 2008-12, Vol.44 (12), p.1305-1311
Main Authors: Kotkov, A. P., Grishnova, N. D., Moiseev, A. N., Suchkov, A. I., Denisov, I. A., Smirnova, N. A., Shmatov, N. I., Drozdov, M. N.
Format: Article
Language:English
Subjects:
Cadmium
Cadmium tellurides
Chemical vapor deposition
Chemistry
Chemistry and Materials Science
Deposition
Epitaxy
Industrial Chemistry/Chemical Engineering
Inorganic Chemistry
Inorganic materials
Liquid phase epitaxy
Materials Science
Solid solutions
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Summary:The technique of growing CdTe and Cd x Hg 1 − x Te layers utilizing chemical metalloorganic compound vapor deposition (MOCVD) onto a CdZnTe(111) substrate with a preliminarily deposited Cd y Hg 1 − y Te layer using liquid phase epitaxy (LPE) has been developed. No noticeable changes in the electrophysical parameters and composition of the Cd y Hg 1 − y Te layer take place under such conditions during MOCVD deposition.
ISSN:0020-1685
1608-3172
DOI:10.1134/S002016850812008X