Towards the global modeling of InGaAs-based pseudomorphic HEMTs

We utilize a 3D full-band Cellular Monte Car- lo (CMC) device simulator to model ultrashort gate length pseudomorphic high-electron-mobility transistors ( p -HEMTs). We present the static dc device characteristics and rf response for gate lengths ranging from 10 nm to 50 nm. Preliminary passive resu...

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Bibliographic Details
Published in:Journal of computational electronics 2008-09, Vol.7 (3), p.187-191
Main Authors: Ayubi-Moak, J. S., Akis, R., Ferry, D. K., Goodnick, S. M., Faralli, N., Saraniti, M.
Format: Article
Language:English
Subjects:
Applied sciences
Computer simulation
Devices
Electrical Engineering
Electronics
Engineering
Exact sciences and technology
Gates
High electron mobility transistors
Mathematical and Computational Engineering
Mathematical and Computational Physics
Mechanical Engineering
Microwave and submillimeter wave devices, electron transfer devices
Modelling
Optical and Electronic Materials
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Solvers
Theoretical
Three dimensional
Transistors
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Summary:We utilize a 3D full-band Cellular Monte Car- lo (CMC) device simulator to model ultrashort gate length pseudomorphic high-electron-mobility transistors ( p -HEMTs). We present the static dc device characteristics and rf response for gate lengths ranging from 10 nm to 50 nm. Preliminary passive results using 3D full-wave Maxwell solver are also presented to illustrate the usefulness of and insight that a future coupled full-band/full-wave simulator will provide in more accurately, modeling the high frequency performance of p -HEMTs.
ISSN:1569-8025
1572-8137
DOI:10.1007/s10825-008-0207-5