Temperature Dependence of High Frequency and Noise Performance of Sb-Heterostructure Millimeter-Wave Detectors

The temperature dependence of the microwave and noise performance of zero-bias Sb-heterostructure backward diodes for millimeter-wave detection have been investigated experimentally. Both the junction capacitance and junction resistance were found to decrease with decreasing temperature, while the i...

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Bibliographic Details
Published in:IEEE electron device letters 2007-05, Vol.28 (5), p.336-339
Main Authors: Su, N., Zhang, Z., Schulman, J.N., Fay, P.
Format: Article
Language:English
Subjects:
Antimony
Applied sciences
Backward diodes
Capacitance
Circuit properties
Compound structure devices
Cutoff frequency
Detectors
Devices
Diodes
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Mathematical models
Microwave and submillimeter wave devices, electron transfer devices
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Microwaves
Millimeter wave measurements
millimeter-wave detectors
millimeter-wave diodes
Noise
Noise measurement
Power measurement
Radio frequencies
Radio frequency
Sb-heterostructure
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature dependence
Temperature sensors
tunnel diodes
Voltage
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Summary:The temperature dependence of the microwave and noise performance of zero-bias Sb-heterostructure backward diodes for millimeter-wave detection have been investigated experimentally. Both the junction capacitance and junction resistance were found to decrease with decreasing temperature, while the intrinsic cutoff frequency and sensitivity are observed to increase as the temperature is lowered. A simple physical model that captures these effects is described. The directly measured voltage sensitivity at 50 GHz for a 2times2 mum 2 device increased from 3650 V/W at room temperature to 7190 V/W at 4.2 K. The measured noise equivalent power (NEP) decreased from 4.2 to 0.2 pW/Hz 1/2 as the temperature was lowered from 298 K to 4.2 K when driven from a 50- Omega source. Based on the measured RF sensitivity, S-parameters, and noise spectrum, a NEP of 0.3 pW/Hz 1/2 is projected for room-temperature operation at zero bias using a conjugately matched RF source
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2007.895377