Novel combination of orientation measurements and transmission microscopy for experimental determination of grain boundary miller indices in silicon and other semiconductors

Summary The determination of grain boundary planes in multicrystalline material has only been restricted to transmission electron microscope investigations (Jang et al., 1992; Elgat et al., 1985) or to metallograpical investigations of the grain boundary (Randle et al., 1993). The first method is ex...

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Bibliographic Details
Published in:Journal of microscopy (Oxford) 2012-04, Vol.246 (1), p.70-76
Main Authors: FUNKE, C., BEHM, T., HELBIG, R., SCHMID, E., WÜRZNER, S.
Format: Article
Language:English
Subjects:
Dislocations
Electron back scatter diffraction
Grain boundaries
grain boundary orientation
grain orientation
Infrared
Links
Microscopy
microstructure
multicrystalline silicon
Planes
Semiconductors
Silicon
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Summary:Summary The determination of grain boundary planes in multicrystalline material has only been restricted to transmission electron microscope investigations (Jang et al., 1992; Elgat et al., 1985) or to metallograpical investigations of the grain boundary (Randle et al., 1993). The first method is expensive, and both are complex and time consuming in grain boundary preparation. This paper proposes the determination of grain boundary planes in semiconductor wafer by a combined application of Electron Back Scatter Diffraction and Infrared Transmission Microscopy. In particular, the new method is demonstrated with directional solidificated multicrystalline silicon.
ISSN:0022-2720
1365-2818
DOI:10.1111/j.1365-2818.2011.03588.x