Stable p-Type Conduction from Sb-Decorated Head-to-Head Basal Plane Inversion Domain Boundaries in ZnO Nanowires

We report that Sb-decorated head-to-head (H–H) basal plane inversion domain boundaries (b-IDBs) lead to stable p-type conduction in Sb-doped ZnO nanowires (NWs) due to Sb and O codoping. Aberration-corrected Z-contrast scanning transmission electron microscopy shows that all of the Sb in the NWs is...

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Bibliographic Details
Published in:Nano letters 2012-03, Vol.12 (3), p.1311-1316
Main Authors: Yankovich, Andrew B, Puchala, Brian, Wang, Fei, Seo, Jung-Hun, Morgan, Dane, Wang, Xudong, Ma, Zhenqiang, Kvit, Alex V, Voyles, Paul M
Format: Article
Language:English
Subjects:
Antimony
Antimony - chemistry
Applied sciences
Basal plane
Boundaries
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Density functional theory
Electric Conductivity
Electron states
Electronics
Equipment Design
Equipment Failure Analysis
Exact sciences and technology
Inversions
Materials science
Materials Testing
Mathematical analysis
Methods of electronic structure calculations
Molecular Conformation
Nanocrystalline materials
Nanoscale materials and structures: fabrication and characterization
Nanostructure
Nanotubes - chemistry
Nanotubes - ultrastructure
Nanowires
Particle Size
Physics
Quantum wires
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Transistors
Transistors, Electronic
Zinc oxide
Zinc Oxide - chemistry
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Summary:We report that Sb-decorated head-to-head (H–H) basal plane inversion domain boundaries (b-IDBs) lead to stable p-type conduction in Sb-doped ZnO nanowires (NWs) due to Sb and O codoping. Aberration-corrected Z-contrast scanning transmission electron microscopy shows that all of the Sb in the NWs is incorporated into H–H b-IDBs just under the (0001) NW growth surfaces and the (0001) bottom facets of interior voids. Density functional theory calculations show that the extra basal plane of O per H–H b-IDB makes them electron acceptors. NWs containing these defects exhibited stable p-type behavior in a single NW FET over 18 months. This new mechanism for p-type conduction in ZnO offers the potential of ZnO NW based p–n homojunction devices.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl203848t