Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer

2.7 times increase in room temperature photoluminescence (PL) intensity and 3.2 times increase in electroluminescence (EL) intensity were observed in blue multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) as a result of introduction of nano-needle structure embedded with Ag nanoparticl...

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Bibliographic Details
Published in:Optics express 2012-03, Vol.20 (6), p.6036-6041
Main Authors: Jang, Lee-Woon, Ju, Jin-Woo, Jeon, Dae-Woo, Park, Jae-Woo, Polyakov, A Y, Lee, Seung-Jae, Baek, Jong-Hyeob, Lee, Song-Mei, Cho, Yong-Hoon, Lee, In-Hwan
Format: Article
Language:English
Subjects:
Energy Transfer
Equipment Design
Equipment Failure Analysis
Gallium - chemistry
Gold - chemistry
Indium - chemistry
Lighting - instrumentation
Nanotubes - chemistry
Semiconductors
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Summary:2.7 times increase in room temperature photoluminescence (PL) intensity and 3.2 times increase in electroluminescence (EL) intensity were observed in blue multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) as a result of introduction of nano-needle structure embedded with Ag nanoparticles (NPs) into n-GaN film underlying the active MQW region and thick p-GaN contact layer of LEDs. The nano-needle structure was produced by photoelectrochemical etching. Simultaneously a measurable decrease in room temperature decay time from 2.2 ns in control samples to 1.6 ns in PL was observed. The results are explained by strong coupling of recombination in GaN/InGaN MQWs with Ag NPs related localized surface plasmons.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.20.006036