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Ultraviolet photoelectron spectroscopy of nano In clusters Schottky barriers on sputtered InP
► Ultraviolet photoelectron spectroscopy is used to study effect of nano In clusters on photoelectron spectra of sputtered InP wafers. ► Plasmon peak is observed in the presence of nano In clusters. However, filled energy levels at the Fermi level are not observed. ► Results will be useful in study...
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Published in: | Applied surface science 2011-10, Vol.258 (1), p.143-146 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | ► Ultraviolet photoelectron spectroscopy is used to study effect of nano In clusters on photoelectron spectra of sputtered InP wafers. ► Plasmon peak is observed in the presence of nano In clusters. However, filled energy levels at the Fermi level are not observed. ► Results will be useful in study of epitaxial layers deposited on InP.
Plasmon peaks along with Auger P
LVV peak have been observed in the ultraviolet photoelectron spectra (UPSs) of InP after 5
min of sputtering with 0.5
kV Ar
+ ions. Plasmon and Auger peaks are not observed in UPS of un-sputtered InP surface with native oxides of In and P. Filled electron energy levels are not observed near the Fermi level from 5
min sputtered InP surface due to increase of ionization potential of nano In clusters. |
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ISSN: | 0169-4332 1873-5584 |
DOI: | 10.1016/j.apsusc.2011.08.020 |