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Ultraviolet photoelectron spectroscopy of nano In clusters Schottky barriers on sputtered InP

► Ultraviolet photoelectron spectroscopy is used to study effect of nano In clusters on photoelectron spectra of sputtered InP wafers. ► Plasmon peak is observed in the presence of nano In clusters. However, filled energy levels at the Fermi level are not observed. ► Results will be useful in study...

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Bibliographic Details
Published in:Applied surface science 2011-10, Vol.258 (1), p.143-146
Main Authors: Kumar, Shailendra, Mukherjee, C., Dixit, V.K., Singh, S.D., Jha, S.N.
Format: Article
Language:English
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Summary:► Ultraviolet photoelectron spectroscopy is used to study effect of nano In clusters on photoelectron spectra of sputtered InP wafers. ► Plasmon peak is observed in the presence of nano In clusters. However, filled energy levels at the Fermi level are not observed. ► Results will be useful in study of epitaxial layers deposited on InP. Plasmon peaks along with Auger P LVV peak have been observed in the ultraviolet photoelectron spectra (UPSs) of InP after 5 min of sputtering with 0.5 kV Ar + ions. Plasmon and Auger peaks are not observed in UPS of un-sputtered InP surface with native oxides of In and P. Filled electron energy levels are not observed near the Fermi level from 5 min sputtered InP surface due to increase of ionization potential of nano In clusters.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2011.08.020