Perovskite oxynitride LaTiOxN|>y thin films: Dielectric characterization in low and high frequencies

Lanthanum titanium oxynitride (LaTiOxN|>y) thin films are studied with respect to their dielectric properties in low and high frequencies. Thin films are deposited by radio frequency magnetron sputtering on different substrates. Effects of nitrogen content and crystalline quality on dielectric pr...

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Bibliographic Details
Published in:Thin solid films 2011-11, Vol.520 (2), p.778-783
Main Authors: Lu, Y, Ziani, A, Le Paven-Thivet, C, Benzerga, R, Le Gendre, L, Fasquelle, D, Kassem, H, Tessier, F, Vigneras, V, Carru, J-C, Sharaiha, A
Format: Article
Language:English
Subjects:
Deposition
Dielectric properties
High frequencies
Oxynitrides
Platinum
Silicon substrates
Thin films
Titanium
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Summary:Lanthanum titanium oxynitride (LaTiOxN|>y) thin films are studied with respect to their dielectric properties in low and high frequencies. Thin films are deposited by radio frequency magnetron sputtering on different substrates. Effects of nitrogen content and crystalline quality on dielectric properties are investigated. In low-frequency range, textured LaTiOxN|>y thin films deposited on conductive single crystal Nb-STO show a dielectric constant epsilon 'a[control] arrow right 40 with low losses tan delta =0.012 at 100kHz. For the LaTiOxN|>ypolycrystalline films deposited on conductive silicon substrates with platinum (Pt/Ti/SiO2/Si), the tunability reached up to 57% for a weak electric field of 50kV/cm. In high-frequency range, epitaxial LaTiOxN|>y films deposited on MgO substrate present a high dielectric constant with low losses ( epsilon 'a[control] arrow right 70, tan delta =0.011, 12GHz).
ISSN:0040-6090
DOI:10.1016/j.tsf.2011.01.226