Nitrogen reaction with silicon: Investigation of Si undercooling and Si sub(3)N sub(4) growth

The interaction of nitrogen with liquid and solid silicon at high temperature is investigated in an electromagnetic levitation set-up. It is shown that the nucleation undercooling of Si decreases monotonically from 300 to 1 K when the concentration of nitrogen in the solidified droplet increases fro...

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Bibliographic Details
Published in:Journal of crystal growth 2011-12, Vol.336 (1), p.77-81
Main Authors: Beaudhuin, M, Zaidat, K, Duffar, T, Lemiti, M
Format: Article
Language:English
Subjects:
Crystal growth
Droplets
Levitation
Liquids
Nucleation
Silicon
Supercooling
Undercooling
Online Access:Get full text
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Summary:The interaction of nitrogen with liquid and solid silicon at high temperature is investigated in an electromagnetic levitation set-up. It is shown that the nucleation undercooling of Si decreases monotonically from 300 to 1 K when the concentration of nitrogen in the solidified droplet increases from 0 to 600 ppmw. Several alpha - and beta -Si sub(3)N sub(4) morphologies are observed and their growth conditions are linked to the various stages of the Si droplet cooling down. It follows that electromagnetic levitation is a valuable tool for investigation of the chemical behavior of highly reactive liquids at high temperature.
ISSN:0022-0248
DOI:10.1016/j.jcrysgro.2011.09.036