Ultrathin organic single crystals: fabrication, field-effect transistors and thickness dependence of charge carrier mobility

Organic single crystals with thickness ranging from a few monolayers to micrometres were fabricated by an "Organic Crystal Cleavage" method. The mobility slightly increased with decreased thickness and rose sharply when the crystal thickness was below some critical thickness. The gate indu...

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Bibliographic Details
Published in:Journal of materials chemistry 2011-01, Vol.21 (13), p.4771-4773
Main Authors: Jiang, Hui, Tan, Ke Jie, Zhang, Keke K., Chen, Xiaodong, Kloc, Christian
Format: Article
Language:English
Subjects:
Barriers
Channels
Contact
Crystals
Organic crystals
Semiconductor devices
Single crystals
Transistors
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Summary:Organic single crystals with thickness ranging from a few monolayers to micrometres were fabricated by an "Organic Crystal Cleavage" method. The mobility slightly increased with decreased thickness and rose sharply when the crystal thickness was below some critical thickness. The gate induced charges in the field-effect transistor (FET) channel and in the vicinity of the metal-semiconductor interface reducing the contact barrier. The values of mobility measured on very thin crystals without the contact barrier precisely reflect the transport properties of organic semiconductors.
ISSN:0959-9428
1364-5501
DOI:10.1039/c0jm04383d