Optical properties of As34Te44Ge10Si12 amorphous films

• Published in: Physica. B, Condensed matter Condensed matter, 2012, Vol.407 (1), p.33-37
• Main Authors: HEGAB, N. A, EL-MALLAH, H. M
• Format: Article
• Language: English
• Subjects: Absorption coefficient; Amorphous semiconductors; glasses; Condensed matter; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Dispersions; Exact sciences and technology; Glass; Mathematical analysis; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Physics; Thin films; Wavelengths
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2011.09.025

Amorphous thin films of As34Te44Ge10Si12 were prepared by thermal evaporation technique from its bulk glass onto glass substrates. The reflectance R and transmittance T have been measured in the spectral range 400-2500 nm. The values of the refractive index n, the extinction coefficient k and the absorption coefficient alpha were calculated for the studied thin films in the thickness range 137.5-201 nm. It is found that both n and k are independent of the film thickness. The refractive index n shows an anomalous behavior for the wavelength I>> range 400-1100 nm, while it has normal dispersion for the wavelength greater than 1100 nm. The values of the dispersion energy Ed, the oscillator energy Eo, the lattice dielectric constant I mu L and the high frequency dielectric constant I mu infinity have been determined. The value of I mu L is greater than I mu infinity by 1.112, which indicates that there is free carrier contribution in polarization with very small concentration. The optical energy gap [inline image] is calculated from the absorption coefficient alpha by Tauc's extrapolation procedure and the type of transitions were found to be allowed indirect transitions with optical gap of 0.95 eV for the sample under test.