Electrical and photovoltaic properties of FeTPPCl/p-Si heterojunction

► A junction of FeTPPCl/p-Si is fabricated using a thermal evaporation technique. ► The junction parameters are investigated by using ( I– V) and ( C– V) measurements. ► Also, the photovoltaic properties of this junction are investigated. Hybrid heterojunction cell based on thermally evaporated 5,10...

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Bibliographic Details
Published in:Synthetic metals 2011-11, Vol.161 (21), p.2253-2258
Main Authors: El-Nahass, M.M., Metwally, H.S., El-Sayed, H.E.A., Hassanien, A.M.
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Diodes
Electric potential
Electronics
Exact sciences and technology
FeTPPCl
Heterojunctions
Hybrid heterojunction
Organic/inorganic heterojunction
Photovoltaic
Photovoltaic cells
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Solar cells
Volt-ampere characteristics
Voltage
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Summary:► A junction of FeTPPCl/p-Si is fabricated using a thermal evaporation technique. ► The junction parameters are investigated by using ( I– V) and ( C– V) measurements. ► Also, the photovoltaic properties of this junction are investigated. Hybrid heterojunction cell based on thermally evaporated 5,10,15,20-tetraphenyl-21H, 23H-porphine iron (III) chloride (FeTPPCl) as the organic semiconductor and p-Si wafer as the inorganic semiconductor have been investigated. This device showed rectification behaviour like diode. The conduction mechanisms and the diode parameters have been studied using current–voltage ( I– V) characteristics in the temperature range (298–373 K) and capacitance–voltage ( C– V) characteristics at room temperature. This cell exhibited photovoltaic characteristics with a short-circuit current ( I sc ) of 2.8 mA, an open-circuit voltage ( V oc ) of 0.475 V, a fill factor FF = 32%.
ISSN:0379-6779
1879-3290
DOI:10.1016/j.synthmet.2011.08.030