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Electrical and photovoltaic properties of FeTPPCl/p-Si heterojunction
► A junction of FeTPPCl/p-Si is fabricated using a thermal evaporation technique. ► The junction parameters are investigated by using ( I– V) and ( C– V) measurements. ► Also, the photovoltaic properties of this junction are investigated. Hybrid heterojunction cell based on thermally evaporated 5,10...
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| Published in: | Synthetic metals 2011-11, Vol.161 (21), p.2253-2258 |
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| Main Authors: | , , , |
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| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c374t-38589fb9fd2dbdc862639039447132e6c9e9c24013b44d5e7709f1b77169a1933 |
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| cites | cdi_FETCH-LOGICAL-c374t-38589fb9fd2dbdc862639039447132e6c9e9c24013b44d5e7709f1b77169a1933 |
| container_end_page | 2258 |
| container_issue | 21 |
| container_start_page | 2253 |
| container_title | Synthetic metals |
| container_volume | 161 |
| creator | El-Nahass, M.M. Metwally, H.S. El-Sayed, H.E.A. Hassanien, A.M. |
| description | ► A junction of FeTPPCl/p-Si is fabricated using a thermal evaporation technique. ► The junction parameters are investigated by using (
I–
V) and (
C–
V) measurements. ► Also, the photovoltaic properties of this junction are investigated.
Hybrid heterojunction cell based on thermally evaporated 5,10,15,20-tetraphenyl-21H, 23H-porphine iron (III) chloride (FeTPPCl) as the organic semiconductor and p-Si wafer as the inorganic semiconductor have been investigated. This device showed rectification behaviour like diode. The conduction mechanisms and the diode parameters have been studied using current–voltage (
I–
V) characteristics in the temperature range (298–373
K) and capacitance–voltage (
C–
V) characteristics at room temperature. This cell exhibited photovoltaic characteristics with a short-circuit current (
I
sc
) of 2.8
mA, an open-circuit voltage (
V
oc
) of 0.475
V, a fill factor
FF
=
32%. |
| doi_str_mv | 10.1016/j.synthmet.2011.08.030 |
| format | article |
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I–
V) and (
C–
V) measurements. ► Also, the photovoltaic properties of this junction are investigated.
Hybrid heterojunction cell based on thermally evaporated 5,10,15,20-tetraphenyl-21H, 23H-porphine iron (III) chloride (FeTPPCl) as the organic semiconductor and p-Si wafer as the inorganic semiconductor have been investigated. This device showed rectification behaviour like diode. The conduction mechanisms and the diode parameters have been studied using current–voltage (
I–
V) characteristics in the temperature range (298–373
K) and capacitance–voltage (
C–
V) characteristics at room temperature. This cell exhibited photovoltaic characteristics with a short-circuit current (
I
sc
) of 2.8
mA, an open-circuit voltage (
V
oc
) of 0.475
V, a fill factor
FF
=
32%.</description><identifier>ISSN: 0379-6779</identifier><identifier>EISSN: 1879-3290</identifier><identifier>DOI: 10.1016/j.synthmet.2011.08.030</identifier><identifier>CODEN: SYMEDZ</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Compound structure devices ; Diodes ; Electric potential ; Electronics ; Exact sciences and technology ; FeTPPCl ; Heterojunctions ; Hybrid heterojunction ; Organic/inorganic heterojunction ; Photovoltaic ; Photovoltaic cells ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Semiconductors ; Solar cells ; Volt-ampere characteristics ; Voltage</subject><ispartof>Synthetic metals, 2011-11, Vol.161 (21), p.2253-2258</ispartof><rights>2011 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c374t-38589fb9fd2dbdc862639039447132e6c9e9c24013b44d5e7709f1b77169a1933</citedby><cites>FETCH-LOGICAL-c374t-38589fb9fd2dbdc862639039447132e6c9e9c24013b44d5e7709f1b77169a1933</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24770498$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>El-Nahass, M.M.</creatorcontrib><creatorcontrib>Metwally, H.S.</creatorcontrib><creatorcontrib>El-Sayed, H.E.A.</creatorcontrib><creatorcontrib>Hassanien, A.M.</creatorcontrib><title>Electrical and photovoltaic properties of FeTPPCl/p-Si heterojunction</title><title>Synthetic metals</title><description>► A junction of FeTPPCl/p-Si is fabricated using a thermal evaporation technique. ► The junction parameters are investigated by using (
I–
V) and (
C–
V) measurements. ► Also, the photovoltaic properties of this junction are investigated.
Hybrid heterojunction cell based on thermally evaporated 5,10,15,20-tetraphenyl-21H, 23H-porphine iron (III) chloride (FeTPPCl) as the organic semiconductor and p-Si wafer as the inorganic semiconductor have been investigated. This device showed rectification behaviour like diode. The conduction mechanisms and the diode parameters have been studied using current–voltage (
I–
V) characteristics in the temperature range (298–373
K) and capacitance–voltage (
C–
V) characteristics at room temperature. This cell exhibited photovoltaic characteristics with a short-circuit current (
I
sc
) of 2.8
mA, an open-circuit voltage (
V
oc
) of 0.475
V, a fill factor
FF
=
32%.</description><subject>Applied sciences</subject><subject>Compound structure devices</subject><subject>Diodes</subject><subject>Electric potential</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>FeTPPCl</subject><subject>Heterojunctions</subject><subject>Hybrid heterojunction</subject><subject>Organic/inorganic heterojunction</subject><subject>Photovoltaic</subject><subject>Photovoltaic cells</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductors</subject><subject>Solar cells</subject><subject>Volt-ampere characteristics</subject><subject>Voltage</subject><issn>0379-6779</issn><issn>1879-3290</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqFkE9LAzEQxYMoWKtfQfYinnabP9tNclNKq0LBgvUcstlZmrLdrEla6Lc3perV08zhvXlvfgjdE1wQTKrJtgjHPm52EAuKCSmwKDDDF2hEBJc5oxJfohFmaa84l9foJoQtxphIOh2h-bwDE701ust032TDxkV3cF3U1mSDdwP4aCFkrs0WsF6tZt1kyD9stoEI3m33vYnW9bfoqtVdgLufOUafi_l69pov31_eZs_L3DBexpyJqZBtLduGNnVjREUrJjGTZckJo1AZCdLQEhNWl2UzBc6xbEnNOamkJpKxMXo8303NvvYQotrZYKDrdA9uH5SsmBBJLpKyOiuNdyF4aNXg7U77oyJYnbCprfrFpk7YFBYqYUvGh58IHRKU1uve2PDnpmUqVcpTwNNZB-nfgwWvgrHQG2isT0RV4-x_Ud8iXYY8</recordid><startdate>20111101</startdate><enddate>20111101</enddate><creator>El-Nahass, M.M.</creator><creator>Metwally, H.S.</creator><creator>El-Sayed, H.E.A.</creator><creator>Hassanien, A.M.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20111101</creationdate><title>Electrical and photovoltaic properties of FeTPPCl/p-Si heterojunction</title><author>El-Nahass, M.M. ; Metwally, H.S. ; El-Sayed, H.E.A. ; Hassanien, A.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c374t-38589fb9fd2dbdc862639039447132e6c9e9c24013b44d5e7709f1b77169a1933</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Applied sciences</topic><topic>Compound structure devices</topic><topic>Diodes</topic><topic>Electric potential</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>FeTPPCl</topic><topic>Heterojunctions</topic><topic>Hybrid heterojunction</topic><topic>Organic/inorganic heterojunction</topic><topic>Photovoltaic</topic><topic>Photovoltaic cells</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Semiconductors</topic><topic>Solar cells</topic><topic>Volt-ampere characteristics</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>El-Nahass, M.M.</creatorcontrib><creatorcontrib>Metwally, H.S.</creatorcontrib><creatorcontrib>El-Sayed, H.E.A.</creatorcontrib><creatorcontrib>Hassanien, A.M.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Synthetic metals</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>El-Nahass, M.M.</au><au>Metwally, H.S.</au><au>El-Sayed, H.E.A.</au><au>Hassanien, A.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical and photovoltaic properties of FeTPPCl/p-Si heterojunction</atitle><jtitle>Synthetic metals</jtitle><date>2011-11-01</date><risdate>2011</risdate><volume>161</volume><issue>21</issue><spage>2253</spage><epage>2258</epage><pages>2253-2258</pages><issn>0379-6779</issn><eissn>1879-3290</eissn><coden>SYMEDZ</coden><abstract>► A junction of FeTPPCl/p-Si is fabricated using a thermal evaporation technique. ► The junction parameters are investigated by using (
I–
V) and (
C–
V) measurements. ► Also, the photovoltaic properties of this junction are investigated.
Hybrid heterojunction cell based on thermally evaporated 5,10,15,20-tetraphenyl-21H, 23H-porphine iron (III) chloride (FeTPPCl) as the organic semiconductor and p-Si wafer as the inorganic semiconductor have been investigated. This device showed rectification behaviour like diode. The conduction mechanisms and the diode parameters have been studied using current–voltage (
I–
V) characteristics in the temperature range (298–373
K) and capacitance–voltage (
C–
V) characteristics at room temperature. This cell exhibited photovoltaic characteristics with a short-circuit current (
I
sc
) of 2.8
mA, an open-circuit voltage (
V
oc
) of 0.475
V, a fill factor
FF
=
32%.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.synthmet.2011.08.030</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0379-6779 |
| ispartof | Synthetic metals, 2011-11, Vol.161 (21), p.2253-2258 |
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| source | ScienceDirect Freedom Collection |
| subjects | Applied sciences Compound structure devices Diodes Electric potential Electronics Exact sciences and technology FeTPPCl Heterojunctions Hybrid heterojunction Organic/inorganic heterojunction Photovoltaic Photovoltaic cells Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Solar cells Volt-ampere characteristics Voltage |
| title | Electrical and photovoltaic properties of FeTPPCl/p-Si heterojunction |
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