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Switchable photoconductivity of quantum dot films using cross-linking ligands with light-sensitive structures

This paper describes the use of a diarylethylene (DAE) ligand, which adopts structures that are sensitive to the wavelength of light, to cross-link films of CdSe quantum dots (QDs) within electrical junctions with photoswitchable conductivity. These QD-DAE films are deposited on indium-tin-oxide/pol...

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Bibliographic Details
Published in:Journal of materials chemistry 2011-01, Vol.21 (31), p.11492-11497
Main Authors: Lilly, G. Daniel, Whalley, Adam C., Grunder, Sergio, Valente, Cory, Frederick, Matthew T., Stoddart, J. Fraser, Weiss, Emily A.
Format: Article
Language:English
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Summary:This paper describes the use of a diarylethylene (DAE) ligand, which adopts structures that are sensitive to the wavelength of light, to cross-link films of CdSe quantum dots (QDs) within electrical junctions with photoswitchable conductivity. These QD-DAE films are deposited on indium-tin-oxide/poly(3,4-ethylenedioxy-thiophene):poly(styrenesul f onate) (ITO/PEDOT:PSS) electrodes and have eutectic Ga-In top-contacts. The photocurrent density of the cross-linked QD films is enhanced by a factor of 6.5 (averaged over all applied voltages) when the DAE ligand is switched from its open, non-conductive form (by illumination with 500-650 nm light) to its closed, conductive form (by illumination with 300-400 nm light). This enhancement is accomplished by changing the inter-particle electronic coupling, not the inter-particle distance. Identical QD films cross-linked with dibenzenedithiol ligands have a photoconductivity that is insensitive to the wavelength of light.
ISSN:0959-9428
1364-5501
DOI:10.1039/c0jm04397d