Pentacene nanostructural interlayer for the efficiency improvement of polymer solar cells

In poly(3-hexylthiophene) mixed with phenyl C61-butyric acid methyl ester heterojunction polymer solar cells, organic small molecular pentacene was introduced as the interfacial layer between PEDOT:PSS coated ITO substrates and polymer layer. It is found that the short circuit current density and po...

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Bibliographic Details
Published in:Thin solid films 2011-11, Vol.520 (2), p.676-679
Main Authors: Zhang, Fujun, Li, Yuan, Tang, Weihua, Wang, Jian, Xu, Xiaowei, Zhuo, Zuliang, Xu, Zheng, Wang, Yongsheng, Carroll, David
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: structure, mechanical and thermal properties
Energy
Exact sciences and technology
Interlayer
Interlayers
Morphology
Nanomaterials
Nanostructure
Natural energy
Pentacene
Photovoltaic cells
Photovoltaic conversion
Physics
Polymer solar cells
Solar cells
Solar cells. Photoelectrochemical cells
Solar energy
Solar power generation
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Thin films
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Summary:In poly(3-hexylthiophene) mixed with phenyl C61-butyric acid methyl ester heterojunction polymer solar cells, organic small molecular pentacene was introduced as the interfacial layer between PEDOT:PSS coated ITO substrates and polymer layer. It is found that the short circuit current density and power conversion efficiency were distinctly improved due to the introduction of the nanostructural pentacene interlayer. The nearly 100% power conversion efficiency improvement was obtained on the cells with a 4 nm pentacene interlayer, which benefits from the increased short circuit current from 2.34 mA/cm 2 to 5.76 mA/cm 2. The morphology of different thicknesses of pentacene thin films was observed by atomic force microscopy. The effect of pentacene interlayer's thickness on the distribution of light in the active layer was simulated by using a transfer matrix mode.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2010.12.252