Characterization of transparent conducting oxide thin films deposited on ceramic substrates

In this work, we investigate the optical and electrical properties of various transparent conductive oxide (TCO) thin films deposited on insulating ceramics for emerging optoelectronic applications. Thin films investigated include indium tin oxide (ITO), ruthenium oxide (RuO 2), and iridium oxide (I...

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Bibliographic Details
Published in:Materials letters 2012, Vol.66 (1), p.233-235
Main Authors: Krishna, Ramesh M., Hayes, Timothy C., Krementz, Daniel, Weeks, George, Torres, Adrián Méndez, Brinkman, Kyle, Mandal, Krishna C.
Format: Article
Language:English
Subjects:
absorbance
aluminum oxide
Atomic force microscopy
Ceramic substrates
Ceramics
Conduction
Deposition
Electrical properties
indium
Indium tin oxide
iridium
Oxides
pyrolysis
ruthenium
Ruthenium oxide
Thin films
tin
transmittance
Transparent conducting oxides
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Summary:In this work, we investigate the optical and electrical properties of various transparent conductive oxide (TCO) thin films deposited on insulating ceramics for emerging optoelectronic applications. Thin films investigated include indium tin oxide (ITO), ruthenium oxide (RuO 2), and iridium oxide (IrO 2) on Al 2O 3 ceramic substrates. The conducting films have been deposited by various techniques including RF magnetron sputtering and low-cost spray pyrolysis. The morphological characteristics of the films were carried out using high magnification optical microscopy and atomic force microscopy (AFM). Optical and electrical characterization was carried out by optical absorbance/transmittance, van der Pauw, current–voltage (I–V), and Hall effect measurements. The results are presented in this paper. ► ITO, RuO 2, and IrO 2 thin films have been deposited on Al 2O 3 ceramic substrates. ► Deposited films were characterized using optical and electrical measurements. ► The qualities of ITO and RuO 2 films were superior to IrO 2 films. ► These films can be used for tamper resistance structural health monitoring studies.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2011.08.066