Highly Efficient Charge Separation and Collection across in Situ Doped Axial VLS-Grown Si Nanowire p–n Junctions

VLS-grown semiconductor nanowires have emerged as a viable prospect for future solar-based energy applications. In this paper, we report highly efficient charge separation and collection across in situ doped Si p–n junction nanowires with a diameter

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Bibliographic Details
Published in:Nano letters 2012-04, Vol.12 (4), p.1965-1971
Main Authors: Mohite, A. D, Perea, D. E, Singh, S, Dayeh, S. A, Campbell, I. H, Picraux, S. T, Htoon, H
Format: Article
Language:English
Subjects:
Charge
Chemical vapor deposition
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of nanofabrication
Nanocrystalline materials
Nanoscale materials and structures: fabrication and characterization
Nanowires
P-n junctions
Physics
Quantum wires
Reactors
Semiconductors
Separation
Silicon
Walls
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Description
Summary:VLS-grown semiconductor nanowires have emerged as a viable prospect for future solar-based energy applications. In this paper, we report highly efficient charge separation and collection across in situ doped Si p–n junction nanowires with a diameter
ISSN:1530-6984
1530-6992
DOI:10.1021/nl204505p