How The Smallest Damage At The Surface Of Semiconductor Crystals Develops Into Large Defects

"Models used so far are mainly based on data measured by electron microscopy in very small crystal samples," Dr. Elias Hamann, another member of the team, explains. The findings obtained will help improve existing models for the prognosis of defect formation and defect propagation and, hen...

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Bibliographic Details
Published in:ECN 2017-12
Main Author: Landgraf, Monika
Format: Article
Language:English
Subjects:
Crystal defects
Crystals
Defects
Microscopy
Semiconductor crystals
Semiconductors
Silicon wafers
Online Access:Get full text
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Summary:"Models used so far are mainly based on data measured by electron microscopy in very small crystal samples," Dr. Elias Hamann, another member of the team, explains. The findings obtained will help improve existing models for the prognosis of defect formation and defect propagation and, hence, provide indications of how the fabrication process of computer chips can be optimized.
ISSN:1523-3081