Optical characterization of positive photoresists

An in-depth characterization of the optical properties of a positive g-line photoresist at 632.8 nm from a HeNE laser is presented. The optical properties investigated include absorption and scattering coefficients, total attenuation coefficient, and scattering anisotropy factor.

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Bibliographic Details
Published in:Semiconductor International 2001-06, Vol.24 (6), p.163
Main Authors: Sardar, Dhiraj K, Mayo, Michael L, Sayka, Anthony, Yow, Raylon M
Format: Magazinearticle
Language:English
Subjects:
Anisotropy
Engineers
Graduate students
Lasers
Light
Manufacturing
Mechanical engineering
Monte Carlo simulation
Optical properties
Optics
Physics
Plasma etching
R&D
Research & development
Semiconductors
Target recognition
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Description
Summary:An in-depth characterization of the optical properties of a positive g-line photoresist at 632.8 nm from a HeNE laser is presented. The optical properties investigated include absorption and scattering coefficients, total attenuation coefficient, and scattering anisotropy factor.
ISSN:0163-3767